Caiku Electronic
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The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® SuperSi series is based on unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.
| Parameter | Value | Unit |
|---|---|---|
| VDS, min @ Tj(max) | 700 | V |
| ID, pulse | 36 | A |
| RDS(ON), max @ VGS=10V | 340 | mΩ |
| Qg | 9.6 | nC |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current, TC=25 °C | ID | 12 | A |
| Pulsed drain current, TC=25 °C | ID, pulse | 36 | A |
| Power dissipation, TC=25 °C | PD | 83 | W |
| Single pulsed avalanche energy | EAS | 200 | mJ |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 | - | - | V |
| Gate threshold voltage | VGS(th) | 2.9 | - | 3.9 | V |
| Drain-source on-resistance | RDS(ON) | - | 0.30 | 0.34 | Ω |
| Input capacitance | Ciss | - | 443.5 | - | pF |
| Total gate charge | Qg | - | 9.6 | - | nC |
